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The Thousand-Fold Jump: How a 1989 Equation Built the Chips Behind Tesla's Motors

Silicon power electronics waste massive electrical energy as heat in electric car inverters and solar converters; Jayant Baliga proved mathematically that wide-bandgap crystals like silicon carbide handle thousands of volts with nearly zero resistance. Published in 1989 when wide-bandgap materials were laboratory curiosities, Baliga’s figure of merit is now the guiding equation behind the high-efficiency silicon carbide chips driving Tesla and modern electric vehicles.

Author
B. Jayant Baliga
Published
1989
Journal
IEEE Electron Device Letters
Last updated
September 2026
The Thousand-Fold Jump: How a 1989 Equation Built the Chips Behind Tesla's Motors

In electrical engineering, converting high-voltage direct current electricity from an electric car battery into alternating current to spin the motor requires high-power transistor switches. For decades, these switches were made of silicon, which heated up rapidly and wasted ten percent of the vehicle's battery energy.

Renowned semiconductor pioneer Jayant Baliga derived a mathematical formula that quantified the ultimate physical limits of electrical switches. His equation proved that exotic wide-bandgap crystals—like silicon carbide and gallium nitride—could handle extreme voltages while switching a thousand times faster than silicon with almost zero electrical resistance.

Overlooked for two decades until crystal manufacturing matured, Baliga’s formula transformed power electronics. By extending electric vehicle driving range by ten percent, by shrinking laptop chargers into pocket-sized bricks, and by cutting global data center power waste, wide-bandgap semiconductors power the electrification of the world.

Reference

Baliga, B. J. (1989). Power semiconductor device figure of merit for high-frequency applications. IEEE Electron Device Letters, 10(10), 455–457.

Title

Power semiconductor device figure of merit for high-frequency applications

Abstract

A figure of merit (the Baliga high-frequency figure of merit) is derived for power semiconductor devices operating in high-frequency circuits. Using this figure of merit, it is predicted that the power losses incurred in the power device will increase as the square root of the operating frequency and approximately in proportion to the output power. By relating the device power dissipation to the intrinsic material parameters, it is shown that the power loss can be reduced by using semiconductors with larger mobility and critical electric field for breakdown. Examination of data in the literature indicates that significant performance improvement can be achieved by replacing silicon with gallium arsenide, silicon carbide, or semiconducting diamond.>

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